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  december 2012 hvm-2027-b.doc 1 < high voltage diode modules > RM1200DG-90F high power switching use insulated type high voltage diode modules RM1200DG-90F ? i f 1200a ? v rrm 4500v ? 2-element in a pack ? high insulated type ? soft recovery diode ? alsic baseplate application traction drives, high reliability c onverters / inverters, dc choppers outline drawing & circuit diagram dimensions in mm
< high voltage diode modules > RM1200DG-90F high power switching use insulated type high voltage diode modules december 2012 hvm-2027-b.doc 2 maximum ratings symbol item conditions ratings unit t j = ? 40?+125c 4500 v rrm repetitive peak reverse voltage t j = ? 50c 4400 v i f forward current dc, t c = 65c 1200 a i fsm surge forward current 9.8 ka i 2 t surge current load integral t j_start = 125c, t p = 10 ms, half-sine wave, v r = 0 v 480 ka 2 s p tot maximum power dissipation t c = 25c 6250 w v iso isolation voltage rms, sinusoidal, f = 60 hz, t = 1 min. 10200 v v e partial discharge extinction voltage rms, sinusoidal, f = 60 hz, q pd 10 pc 3500 v t j junction temperature ? 50 ~ +150 c t jop operating junction temperature ? 50 ~ +125 c t stg storage temperature ? 55 ~ +125 c electrical characteristics limits symbol item conditions min typ max unit t j = 25c ? ? 3.0 i rrm repetitive reverse current v rm = v rrm t j = 125c ? 9.0 ? ma t j = 25c ? 2.55 ? v fm forward voltage i f = 1200 a t j = 125c ? 2.85 3.45 v t j = 25c ? 0.70 ? t rr reverse recovery time t j = 125c ? 0.90 ? s t j = 25c ? 1050 ? i rr reverse recovery current t j = 125c ? 1140 ? a t j = 25c ? 990 ? q r0hr reverse recovery charge t j = 125c ? 1560 ? c t j = 25c ? 1.44 ? e rec(10%) reverse recovery energy (note 1) t j = 125c ? 2.25 ? j t j = 25c ? 1.65 ? e rec reverse recovery energy v cc = 2800 v i f = 1200 a ? d i /d t = 3900 a/s @ t j = 25c ? d i /d t = 3600 a/s @ t j = 125c l s = 150 nh inductive load t j = 125c ? 2.55 ? j thermal characteristics limits symbol item conditions min typ max unit r th(j-c) thermal resistance junction to case (per 1/2 module) ? ? 20.0 k/kw r th(c-s) contact thermal resistance case to heat sink, ? grease = 1 w/m k d (c-s) = 100 m (per 1/ 2 module) ? 16.0 ? k/kw mechanical characteristics limits symbol item conditions min typ max unit m t m8 : main terminals screw 7.0 ? 22.0 nm m s mounting torque m6 : mounting screw 3.0 ? 6.0 nm m mass ? 1.0 ? kg cti comparative tracking index 600 ? ? ? d a clearance 26.0 ? ? mm d s creepage distance 56.0 ? ? mm l p ak parasitic stray inductance ? 15.0 ? nh r aa?+kk? internal lead resistance t c = 25c ? 0.09 ? m ? note 1. e rec(10%) are the integral of 0.1v r x 0.1i f x dt. note 2. definition of all items is according to iec 60747, unless otherwise specified.
< high voltage diode modules > RM1200DG-90F high power switching use insulated type high voltage diode modules december 2012 hvm-2027-b.doc 3 performance curves forward characteristics (typical) 0 600 12 00 18 00 24 00 012345 forward voltage [v] forward current [a] t j = 25 c t j = 12 5 c reverse recovery characteristics (typical) 0.1 1 10 10 0 100 1000 10000 forward current [a] reverse recovery time [s] 10 100 1 000 1 000 0 reverse recovery current [a] t rr i rr v cc = 28 00 v -d i /d t = 360 0 a/ s @12 5c l s = 1 50n h, t j = 12 5c in duc t iv e l oa d reverse recovery energy characteristics (typical) 0 1.5 3 4.5 6 0 6 00 12 00 180 0 2 40 0 forward current [a] reverse recovery energy [j] e rec v cc = 2800v -d i /d t = 3 600 a/ s @1 25 c l s = 15 0nh , t j = 125c i ndu cti ve lo ad reverse recovery safe operating area (rrsoa) 0 10 00 20 00 30 00 40 00 0 10002000300040005000 reverse voltag e [v] reverse recovery current [a] v cc ? 32 00 v, -d i /d t < 6ka/ s t j = 1 25 c
< high voltage diode modules > RM1200DG-90F high power switching use insulated type high voltage diode modules december 2012 hvm-2027-b.doc 4 performance curves transient thermal impedance characteristics 0 0.2 0.4 0.6 0.8 1 1.2 0. 001 0.01 0.1 1 10 tim e [s ] normalized transient thermal impedance r th(j-c ) = 20. 0k/kw ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? exp1 rz i t n 1i i )cj(th )t( ? 1 2 3 4 r i [k/kw] 0.0055 0.2360 0.4680 0.2905 t i [sec] 0.0001 0.0131 0.0878 0.6247
< high voltage diode modules > RM1200DG-90F high power switching use insulated type high voltage diode modules december 2012 hvm-2027-b.doc 5 ? 2011 mitsubishi electric corporation. all rights reserved. notes regarding these materials ? these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to mitsubishi electric corporation or a third party. ? mitsubishi electric corporation assumes no responsibility for any damage, or infringement of any third-party?s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. ? all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. mitsubishi electric corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. ? please also pay attention to information published by mitsubishi electric corporation by various means, including the mitsubishi semiconductor home page ( http://www.mitsubishielectric.com/ ). ? when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. mitsubishi electric corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. ? mitsubishi electric corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ? the prior written approval of mitsubishi electric corporation is necessary to reprint or reproduce in whole or in part these materials. ? if these products or technologies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. ? any diversion or re-export contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. ? please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for further details on these materials or the products contained therein. keep safety first in your circuit designs! mitsubishi electric corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.


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